Справочник MOSFET. FCB11N60

 

FCB11N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FCB11N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 40 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для FCB11N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

FCB11N60 Datasheet (PDF)

 ..1. Size:924K  fairchild semi
fcb11n60.pdfpdf_icon

FCB11N60

December 2008 TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance.

 0.1. Size:971K  fairchild semi
fcb11n60tm.pdfpdf_icon

FCB11N60

July 2005TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low

 0.2. Size:967K  fairchild semi
fcb11n60ftm.pdfpdf_icon

FCB11N60

December 2008 TMSuperFETFCB11N60F 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.

 9.1. Size:695K  fairchild semi
fcb110n65f.pdfpdf_icon

FCB11N60

April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC

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History: JCS12N60FT | 1N60Z

 

 
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