FCB11N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FCB11N60
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
Тип корпуса: D2PAK
FCB11N60 Datasheet (PDF)
fcb11n60.pdf
December 2008 TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance.
fcb11n60tm.pdf
July 2005TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low
fcb11n60ftm.pdf
December 2008 TMSuperFETFCB11N60F 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.
fcb110n65f.pdf
April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC
fcb110n65f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcb110n65f.pdf
isc N-Channel MOSFET Transistor FCB110N65FFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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