SE4606 - аналоги, параметры транзистора - Справочник транзисторов

SE4606 даташит

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SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606 Complementary Enhancement Mode Field Effect Transistor Revision A External Dimensions (Unit mm) Features n-channel, VDS (V) = 30V ,ID = 8.5A RDS(ON)

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SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606L Complementary Enhancement Mode Field Effect Transistor Revision A External Dimensions (Unit mm) Features n-channel, VDS (V) = 20V ,ID =7A RDS(ON) =20.0m (VGS=4.5V) p-channel, VDS (V) = -18V ,ID =- 5A RDS(ON) =30m (VGS=-4.5V) Applications Power Management in Desktop or DC/DC Converters Construction Sili

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SE4606S N+P Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low VDS = 30V operation voltage. This device is suitable for using RDS(ON) =24m @ VGS=10V as a load switch or in PWM applications. RDS(ON) =39m @ VGS=4.5V Low RDS(on)

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SE4607 Complementary Enhancement Mode Field Effect Transistor Revision A Features PIN CONFIGURATION N-Channel V =20V DS R =20m @V =4.5V, DS(ON) GS P-Channel V = -20V DS R =100m @V =-4.5V DS(ON) GS Applications Power Management in Desktop or DC/DC LCD display Converters Constructions Silicon epitaxial planer Absolute Maximum Ratings (TA=25 ) Parameter

Другие MOSFET... SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 , IRFP260N , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS , SE4942B , SE4946 .