SE60210GA - аналоги, параметры транзистора - Справочник транзисторов

SE60210GA даташит

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Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations

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SE6020B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =14m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se

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SE6020DB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =24m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S

Другие MOSFET... SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , IRF9540N , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 .