VSD007N06MS - аналоги, параметры транзистора - Справочник транзисторов

VSD007N06MS даташит

..1. Size:1027K cn vanguard
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VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 5.0 m N-Channel R DS(on),TYP@ VGS=4.5V 6.0 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

6.1. Size:950K cn vgsemi
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VSD007N04MS-G 40V/90A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 3.6 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.3 m Very low on-resistance RDS(on) I D 90 A VitoMOS Technology TO-252 Fast Switching and High efficiency 100% Avalanche test Part ID Package Type Marking Packing VSD007N04MS-G TO-252 007N04M 2500PCS/Reel Max

9.1. Size:284K cn vanguard
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VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.2 m N-Channel R DS(on),TYP@ VGS=4.5V 2.8 m Enhancement mode I D 150 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking infor

9.2. Size:1017K cn vgsemi
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VSD003N04MS-G 40V/58A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 58 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested TO-252 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part I