SM4807PRL datasheet, подбор замены

 ..1. Size:753K  cn sps
 sm4807prl.pdf 

SM4807PRL -30V /-6A Dual 2P Power MOSFET C C03C C -30V /-6A Dual 2P Power MOSFET 6C03C General Description -30 V V DS -30V /-6A Dual 2P Power MOSFET 40.6 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 63.8 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -6 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested

 9.1. Size:269K  sino
 sm4802dsk.pdf 

SM4802DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/11.2A, D2 D2 RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 12m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equ

 9.2. Size:269K  sino
 sm4805dsk.pdf 

SM4805DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/6A, D1 D2 D2 RDS(ON)= 21m (max.) @ VGS= 10V RDS(ON)= 30m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equipm

 9.3. Size:264K  sino
 sm4804dsk.pdf 

SM4804DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 D2 RDS(ON)= 17m (max.) @ VGS= 10V RDS(ON)= 23m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equipm

 9.4. Size:265K  sino
 sm4803dsk.pdf 

SM4803DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/10A, D2 D2 RDS(ON)= 13m (max.) @ VGS= 10V RDS(ON)= 17m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equi

 9.5. Size:723K  globaltech semi
 gsm4804.pdf 

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.6. Size:283K  silicon standard
 ssm4800agm.pdf 

SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on

 9.7. Size:532K  huashuo
 hsm4805.pdf 

HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4805 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 12 m gate charge for most of the synchronous buck converter applications. ID -9 A The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r

 9.8. Size:595K  cn sps
 sm4803aprl.pdf 

SM4803APRL -30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03C General Description -30 V V DS -30V /-5A Dual 2P Power MOSFET 51.8 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 81.4 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -5 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested

 9.9. Size:28499K  cn sps
 sm4800.pdf 

SM4800 Dual N-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement-Mode MOSFET Description The SM4800 uses advanced trench technology to 1 8 S2 D2 provide excellent RDS(ON) and low gate charge. The 2 7 G2 D2 two MOSFETs make a compact and efficient switch 3 6 S1 D1 and synchronous rectifier combination for use in 4 5 G1 D1 buck converters. SOIC-8 General F

 9.10. Size:768K  cn sps
 sm480t9rl.pdf 

SM480T9RL 30V /25A Single N Power MOSFET H N03H N 30V /25A Single N Power MOSFET 25N03H General Description 30 V V DS 30V /25A Single N Power MOSFET 23.1 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 36.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 25 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested

 9.11. Size:832K  cn sps
 sm4805prl.pdf 

SM4805PRL -30V /-9A Dual 2P Power MOSFET C C03C C -30V /-9A Dual 2P Power MOSFET 9C03C General Description -30 V V DS -30V /-9A Dual 2P Power MOSFET 2.1 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 3.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -9 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM