SM9926Dual N-Channel Enhancement-Mode MOSFET(20V, 6A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28 @ VGS = 4.5V, ID=6A 20V 6A 40 @ VGS =2.5V,ID=5.2A Features 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Lead free product is acquired. 4Surface mount Package. 5RoHS Compliant. Pin 1: Source1 Pin 2: Ga

TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

SM9926DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 20V/8A,D2D2RDS(ON) =20m (max.) @ VGS = 4.5VRDS(ON) =29m (max.) @ VGS = 2.5VS1G1 Reliable and RuggedS2G2 Lead Free and Green Devices Available(RoHS Compliant) Top View of SOP 8(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portabl

SSM9926GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9926GM acheives fast switching performanceBVDSS 20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 30mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 6AD The SSM9926GM is supplied in an RoHS-compliantPb-free; Ro

SSM9926ON-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Low drive current S1 S2Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching,ruggedized device design, ultra l

SSM9926TGON-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Surface mount package S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

SSM9926EMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSD2D2Capable of 2.5V gate drive D1 RDS(ON) 30mD1Low drive current I 6ADG2S2Surface-mount packageG1SO-8S1DescriptionPower MOSFETs from Silicon Standard provide the D1 D2designer with the best combination of fast switching,G1 G2ruggedized device design, ultra low on-resistance a

SSM9926GEON-CHANNEL ENHANCEMENT-MODE POWER MOSFETSG2Low on-resistance BV 20VDSSS2S2D2Capable of 2.5V gate drive RDS(ON) 28mG1S1Low drive current S1 I 4.6ADTSSOP-8D1Surface-mount packageDescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resista

HSM9926 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSM9926 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 6 A The HSM9926 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel