SMIRF12N65T1TL - аналоги и даташиты транзистора

 

SMIRF12N65T1TL - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SMIRF12N65T1TL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 105 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SMIRF12N65T1TL

   - подбор ⓘ MOSFET транзистора по параметрам

 

SMIRF12N65T1TL Datasheet (PDF)

 4.1. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF12N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF12N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF12N65T1TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

 8.3. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF12N65T1TL

SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SM66406D1RL , SM6796D1RL , SM6802S1RL , SM9435 , SM95N03A , SM9926 , SMIRF10N65T1TL , SMIRF10N65T2TL , MMIS60R580P , SMIRF12N65T2TL , SMIRF13N50T1TL , SMIRF13N50T2TL , SMIRF16N65T1TL , SMIRF16N65T2TL , SMIRF16N65T8TL , SMIRF18N50T1TL , SMIRF18N50T2TL .

History: SIE806DF | HX70N6 | TPB60R240M | DMN3033LSNQ | R6504ENJ | NDB708AE | MPGW20R170

 

 
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