2SK3305-S datasheet, подбор замены

 ..1. Size:76K  1
 2sk3305-s 2sk3305 2sk3305-zj.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3305 TO-220AB designed for high voltage applications such as switching power 2SK3305-S TO-262 supply, AC adapter.

 ..2. Size:282K  inchange semiconductor
 2sk3305-s.pdf 

isc N-Channel MOSFET Transistor 2SK3305-S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 6.1. Size:1529K  kexin
 2sk3305-zj.pdf 

SMD Type MOSFET N-Channel MOSFET 2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating 30 V Avalanche capability ratings Drain (D) Body Gate (G) Diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 Con

 6.2. Size:356K  inchange semiconductor
 2sk3305-zj.pdf 

isc N-Channel MOSFET Transistor 2SK3305-ZJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.1. Size:43K  kexin
 2sk3305.pdf 

SMD Type MOSFET MOS Field Effect Transistor 2SK3305 TO-263 Unit mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A) Gate voltage rating 30 V +0.1 0.1max 1.27-0.1 Low on-state resistance +0.1 RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A) 0.81-0.1 2.54 Avalanche capability ratings 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.

 7.2. Size:288K  inchange semiconductor
 2sk3305.pdf 

isc N-Channel MOSFET Transistor 2SK3305 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid