Справочник MOSFET. 2SK3355-ZJ

 

2SK3355-ZJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3355-ZJ
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 100 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Минимальное напряжение отсечки |Vgs(off)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 83 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 170 nC
   Время нарастания (tr): 1450 ns
   Выходная емкость (Cd): 1500 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0058 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3355-ZJ

 

 

2SK3355-ZJ Datasheet (PDF)

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isc N-Channel MOSFET Transistor 2SK3355-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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isc N-Channel MOSFET Transistor 2SK3355-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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isc N-Channel MOSFET Transistor 2SK3355-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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