2SK3338N
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3338N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 340
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27
Ohm
Тип корпуса:
TO3PN
Аналог (замена) для 2SK3338N
2SK3338N
Datasheet (PDF)
..1. Size:286K inchange semiconductor
2sk3338n.pdf 
isc N-Channel MOSFET Transistor 2SK3338NFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
7.1. Size:30K fuji
2sk3338-01.pdf 
FUJI POWER MOS-FET2SK3338-01N-CHANNEL SILICON POWER MOS-FET FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Rating UnitEq
7.2. Size:331K inchange semiconductor
2sk3338w.pdf 
isc N-Channel MOSFET Transistor 2SK3338WFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.1. Size:396K 1
2sk3339-01.pdf 
FUJI POWER MOS-FET2SK3339-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin
8.2. Size:411K 1
2sk3337-01.pdf 
FUJI POWER MOS-FET2SK3337-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unless otherwise
8.3. Size:32K sanyo
2sk3335.pdf 
Ordering number : ENN72162SK3335N-Channel Silicon MOSFET2SK3335Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm 4V drive.2083B[2SK3335]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3335]6.5 2.35.0 0.540.50.851 2 3
8.4. Size:292K panasonic
2sk3333.pdf 
MOS FET()2SK3333NMOSUnit : mm6.9 0.1 2.5 0.10.7 4.0 0.8 0.65 max. 0.45+0.10- 0.050.45+0.10- 0.051.05 0.052.5 0
8.5. Size:286K inchange semiconductor
2sk3339n.pdf 
isc N-Channel MOSFET Transistor 2SK3339NFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.6. Size:330K inchange semiconductor
2sk3339w.pdf 
isc N-Channel MOSFET Transistor 2SK3339WFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.7. Size:331K inchange semiconductor
2sk3337w.pdf 
isc N-Channel MOSFET Transistor 2SK3337WFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.8. Size:286K inchange semiconductor
2sk3337n.pdf 
isc N-Channel MOSFET Transistor 2SK3337NFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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