2SK3340W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3340W
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 295 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 23 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: TO247
2SK3340W Datasheet (PDF)
2sk3340w.pdf
isc N-Channel MOSFET Transistor 2SK3340WFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3340-01.pdf
FUJI POWER MOS-FET2SK3340-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin
2sk3340n.pdf
isc N-Channel MOSFET Transistor 2SK3340NFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3341-01.pdf
FUJI POWER MOS-FET2SK3341-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin
2sk3342.pdf
2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3342 Switching Regulator Applications DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth
2sk3341w.pdf
isc N-Channel MOSFET Transistor 2SK3341WFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3341n.pdf
isc N-Channel MOSFET Transistor 2SK3341NFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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