2SK4064LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK4064LS
Маркировка: K4064
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Минимальное напряжение отсечки |Vgs(off)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 37 nC
Время нарастания (tr): 84 ns
Выходная емкость (Cd): 210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.58 Ohm
Тип корпуса: TO220F
2SK4064LS Datasheet (PDF)
2sk4064ls.pdf
Ordering number : ENA0312D 2SK4064LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4064LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio
2sk4064ls.pdf
isc N-Channel MOSFET Transistor 2SK4064LSFEATURESDrain Current : I =14A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk4063ls.pdf
Ordering number : ENA0397E 2SK4063LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4063LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta
2sk4062ls.pdf
Ordering number : ENA0396E 2SK4062LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4062LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta
2sk4068-01.pdf
http://www.fujielectric.co.jp/products/semiconductor/index.html 2SK4068-01 Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automotiv
2sk4067.pdf
Ordering number : ENA0565 2SK4067SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4067ApplicationsFeatures Motor drive applications. 4.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) I
2sk4065-dl-1e.pdf
2SK4065Ordering number : ENA0324ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures ON-resistance RDS(on)1=4.6m (typ.) Input capacitance Ciss=12200pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75
2sk4066.pdf
2SK4066Ordering number : ENA0225BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60
2sk4065.pdf
Ordering number : ENA0324 2SK4065SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGate
2sk4066-dl-e.pdf
Ordering number : ENA0225A 2SK4066SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures Low ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-
2sk4069-s27-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4066-1e 2sk4066-dl-1e.pdf
Ordering number : ENA0225C2SK4066N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 4.7m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS
2sk4065k.pdf
isc N-Channel MOSFET Transistor 2SK4065KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk4063ls.pdf
isc N-Channel MOSFET Transistor 2SK4063LSFEATURESDrain Current : I =16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.39(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk4065b.pdf
isc N-Channel MOSFET Transistor 2SK4065BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk4062ls.pdf
isc N-Channel MOSFET Transistor 2SK4062LSFEATURESDrain Current : I =18A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.32(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk4067i.pdf
isc N-Channel MOSFET Transistor 2SK4067IFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk4066b.pdf
isc N-Channel MOSFET Transistor 2SK4066BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4068-01.pdf
isc N-Channel MOSFET Transistor 2SK4068-01FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4066k.pdf
isc N-Channel MOSFET Transistor 2SK4066KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4067d.pdf
isc N-Channel MOSFET Transistor 2SK4067DFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
