20N03L-TO252 - описание и поиск аналогов

20N03L TO252 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET A

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)

BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

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BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. 20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. Features 20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ020N03LG4 uses Wayon's 4th generation power trench S G MOSFET technology that has been especially tailored to minimize S S S S G S the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8L switching a

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

NTD20N03L27 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB