2N65-TO252 - аналоги, параметры транзистора - Справочник транзисторов

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2N65 TO252 www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to Ro

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WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features C The WNM12N65/WNM12N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p

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BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

Другие MOSFET... 1N60L-TM3-T , 20N03L-TO252 , 20N06L-TO252 , 20N3LG-TO251 , 20P06-TO252 , 25N06L-TN3 , 25NF20 , 2N0623 , SPP20N60C3 , 2SJ530STL , 2SJ598-Z-E1 , 2SK1589-T1B , 2SK1623 , 2SK2158-T1B , 30N06L , 30N06-TO220 , 30N06-TO252 .