AO4614-30V - аналоги, параметры транзистора - Справочник транзисторов

AO4614-30V даташит

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AO4614&-30V www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at

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AO4614 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614 uses advanced trench technology VDS (V) = 40V -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS = -10V) charge. The complementary MOSFETs may be used in RDS(ON) RDS(ON) H-bridge, Inverters and other applications.

8.2. Size:233K aosemi
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AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614B uses advanced trench technology VDS (V) = 40V, -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS=-10V) charge. The complementary MOSFETs may be used RDS(ON) in H-bridge, Inverters and other applications.

8.3. Size:1597K kexin
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SMD Type MOSFET Complementary Trench MOSFET AO4614B (KO4614B) SOP-8 Unit mm Features N-Channel VDS (V) = 40V ID = 6 A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -5 A (VGS = -10V) RDS(ON) 45m (VGS = -10V) RDS(ON) 63m (VGS = -4.5V)