APM4010NUC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APM4010NUC
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 312 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 85 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 80 nC
Время нарастания (tr): 62 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0064 Ohm
Тип корпуса: TO252
Аналог (замена) для APM4010NUC
APM4010NUC Datasheet (PDF)
apm4010nuc.pdf
APM4010NUCwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM R
apm4010nu.pdf
APM4010NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/57A,RDS(ON)=8.2m (typ.) @ VGS=10VG DRDS(ON)=13m (typ.) @ VGS=5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSDCompliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking
apm4018nu.pdf
APM4018NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,DRDS(ON)=6.5m (typ.) @ VGS=10VGRDS(ON)=9.5m (typ.) @ VGS=4.5VS Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Channel MOSFETO
apm4012nu.pdf
APM4012NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/55A,RDS(ON)=9m (typ.) @ VGS=10VRDS(ON)=12m (typ.) @ VGS=5V Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking Informati
apm4017pu.pdf
APM4017PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-40A, RDS(ON)= 14m (typ.) @ VGS= -10VG D RDS(ON)= 20m (typ.) @ VGS= -4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in LCD TV InverterGDP-Channel MOSFETOrdering and Marking Informatio
apm4015pu.pdf
APM4015PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 13m (typ.) @ VGS=-10VG D RDS(ON)= 19m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrdering and M
apm4015k.pdf
APM4015K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -40V/-7.5A, DDRDS(ON)=18m (typ.) @ VGS=-10VRDS(ON)=25m (typ.) @ VGS=-4.5VSSS Super High Dense Cell DesignG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 1, 2, 3 ) (RoHS Compliant)S S SApplications(4)G Power Management in LCD TV InverterD D D D
apm4015pu.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET APM4015PU Typical CharacterisiticsDrain CurrentPower Dissipation60 50504040303020201010TC=25oC,VG=-10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tj - Junction Temperature (C)Tj - Junction Temperature (C)Safe Operation AreaThermal Transient Impedance2200Duty = 0.
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