CPH3427-TLwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlight

Ordering number : ENN7917 CPH3427N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3427ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 1 ADra

CPH3448Ordering number : ENA1648SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3448ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

Ordering number:EN5985N-Channel MOS Silicon FETCPH3403Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152 2.5V drive.[CPH3403]2.90.150.430 to 0.11 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions

Ordering number : ENN7123CPH3409N-Channel Silicon MOSFETCPH3409Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3409]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

CPH3457Ordering number : ENA1804SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3457ApplicationsFeatures ON-resistance RDS(on)1=73m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour

Ordering number : ENN6924CPH3413N-Channel Silicon MOSFETCPH3413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3413]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond

Ordering number : ENN7124CPH3417N-Channel Silicon MOSFETCPH3417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 1.8V drive.[CPH3417]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

Ordering number:ENN6416N-Channel Silicon MOSFETCPH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3405]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rati

Ordering number : ENA0094 CPH3442N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3442ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 6.5 A

Ordering number : ENN8175CPH3430N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3430ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 2 AD

Ordering number : ENN6998CPH3408N-Channel Silicon MOSFETCPH3408Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3408]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

Ordering number:ENN6417N-Channel Silicon MOSFETCPH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3406]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rati

CPH3455Ordering number : EN8737SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3455ApplicationsFeatures ON-resistance RDS(on)1=80m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source

Ordering number : ENN6862CPH3414N-Channel Silicon MOSFETCPH3414Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3414]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Condit

Ordering number : ENN6997CPH3407N-Channel Silicon MOSFETCPH3407Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3407]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

Ordering number : ENN6777CPH3410N-Channel Silicon MOSFETCPH3410Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3410]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond

CPH3456Ordering number : ENA1803SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3456ApplicationsFeatures ON-resistance RDS(on)1=54m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Sour

CPH3461 Power MOSFET www.onsemi.com 250V, 6.5, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5 (typ) ESD Diode - Protected Gate 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 25

Ordering number : ENA2301A CPH3459 Power MOSFET http://onsemi.com 200V, 3.7, 0.5A, Single N-Channel Features On-resistance RDS(on)1=2.8 (typ) Input Capacitance Ciss=90pF (typ) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage V

Ordering number : ENA2322A CPH3462 Power MOSFET http://onsemi.com 100V, 785m, 1A, Single N-Channel Features On-resistance RDS(on)1=590m (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current

CPH3456 Power MOSFET www.onsemi.com 20V, 71m, 3.5A, Single N-Channel VDSS RDS(on) Max ID MaxFeatures 71 m@4.5V ON-Resistance RDS(on)1=54m (typ) 20V 103 m@2.5V 3.5A 1.8V Drive 156 m@1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol