CSD17301Q5 - описание и поиск аналогов

CSD17301Q5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLUTE M

CSD17301Q5A www.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17301Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 19 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4.3 nC Avalanche Rated VG

CSD17302Q5A www.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17302Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 5.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.2 nC Avalanche Rated VGS

CSD17305Q5A www.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17305Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 14.1 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3 nC Avalanche Rated VGS =

CSD17308Q3 www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17308Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.8 nC Low Thermal Resistance VGS = 3V 12.5 m

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17309Q3 SLPS261B MARCH 2010 REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Cha

CSD17304Q3 www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17304Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and Qgd Qgd Gate Charge Gate to Drain 1.1 nC Low Thermal Resistance VGS = 3V 9.8 m Av

CSD17307Q5A www.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17307Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1 nC Avalanche Rated VGS = 3V

CSD17303Q5 www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17303Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4 nC Avalanche Rated VGS = 3V

CSD17306Q5A www.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17306Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 11.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.4 nC Avalanche Rated VGS