DMC2038LVT-7-F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMC2038LVT-7-F
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 1.15 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 0.6(min) V
Максимально допустимый постоянный ток стока |Id|: 5.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 2.1 nC
Время нарастания (tr): 9 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.024 Ohm
Тип корпуса: TSOP6
Аналог (замена) для DMC2038LVT-7-F
DMC2038LVT-7-F Datasheet (PDF)
dmc2038lvt-7-f.pdf
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DMC2038LVT-7-Fwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.08
dmc2038lvt.pdf
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DMC2038LVTCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID Device V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 35m @ VGS = 4.5V 4.5A Q1 20V Low Input/Output Leakage 56m @ VGS = 1.8V 3.5A Fast Switching Speed 74m @ VGS = -4.5V 3.1A Q2 -20V Totally Lead-Free & Fully RoHS
dmc2004dwk.pdf
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DMC2004DWKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage VGS(th)
dmc2053uvt.pdf
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DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4
dmc2020usd.pdf
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A Product Line ofDiodes Incorporated DMC2020USD20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 ID Max Low gate drive Device V(BR)DSS RDS(on) max TA = 25C Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m @ VGS = 4.5V 8.
dmc2041ufdb.pdf
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DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m
dmc2004lpk.pdf
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DMC2004LPKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: DFN1612-6 Low Gate Threshold Voltage VGS(th)
dmc2004vk.pdf
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DMC2004VKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)
dmc206e2.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC206E2Silicon NPN epitaxial planar typeFor high-frequency amplificationDMC506E2 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (
dmc20501.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20501Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc204a0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC204A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: E
dmc205e0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC205E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter
dmc20401.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20401Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc20601.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20601Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc20201.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20201Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc201a0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC201A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Coll
dmc205c0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC205C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P
dmc20101.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20101Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc204b3.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC204B3Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam
dmc204c0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC204C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P
dmc20402.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC20402Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (
dmc201e0.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DMC201E0Silicon NPN epitaxial planar typeFor High frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2) Ba
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