Справочник MOSFET. F3055L-TO252

 

F3055L-TO252 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: F3055L-TO252
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 41.7 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 16.9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 19.8 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 85 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.073(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для F3055L-TO252

 

 

F3055L-TO252 Datasheet (PDF)

 ..1. Size:851K  cn vbsemi
f3055l-to252.pdf

F3055L-TO252
F3055L-TO252

F3055L TO252www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

 8.1. Size:69K  onsemi
nvf3055l108.pdf

F3055L-TO252
F3055L-TO252

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications in powerhttp://onsemi.comsupplies, converters and power motor controls and bridge circuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW NVF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.2. Size:76K  onsemi
ntf3055l108-d.pdf

F3055L-TO252
F3055L-TO252

NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW Pb-Free Packages are AvailableApplicationsN-ChannelD Power Supplies Converters Pow

 8.3. Size:76K  onsemi
ntf3055l175-d.pdf

F3055L-TO252
F3055L-TO252

NTF3055L175Preferred DevicePower MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures Pb-Free Packages are AvailableN-ChannelDApplications Power Supplies Converters

 8.4. Size:107K  onsemi
ntf3055l108t1g.pdf

F3055L-TO252
F3055L-TO252

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223http://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 120 mWFeatures AEC Q101 Qualified - NVF3055L108N-Channel These Devices are Pb-Free and are RoHS CompliantDAppli

 8.5. Size:75K  onsemi
ntf3055l108.pdf

F3055L-TO252
F3055L-TO252

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications in powerwww.onsemi.comsupplies, converters and power motor controls and bridge circuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW NVF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1

 8.6. Size:104K  onsemi
ntf3055l175t1g.pdf

F3055L-TO252
F3055L-TO252

NTF3055L175Power MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures This is a Pb-Free DeviceN-ChannelDApplications Power Supplies Converters Power Motor Contro

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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