FDS4450 - описание и поиск аналогов

FDS4450 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL In

April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O

May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair- RDS(ON) = 20 m @ VGS = 4.5 V child Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Fast switching speed

May 2013 FDS4480 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (29 nC) switching PWM controllers. It has been optimized for low gate char

December 2006 FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 40 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (45 nC) switching PWM controllers. It has been optimized for low gate charge

December 2001 FDS4488 30V N-Channel PowerTrench MOSFET General Description Features This N MOSFET is produced using Fairchild -Channel 7.9 A, 30 V. R = 22 m @ V = 10 V DS(ON) GS Semiconductor s advanced PowerTrench process that R = 30 m @ V = 4.5 V DS(ON) GS has been especially tailored to minimize on-state resistance and yet maintain superior switching

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

July 2009 FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg

March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m

April 2009 FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

February 2010 tm FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(

FDS4480 40V N-Channel PowerTrench MOSFET Features General Description 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V This N-Channel MOSFET has been designed Low gate charge (29 nC) specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controller

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS4465 P-Channel 1.8V Specified POWERTRENCH MOSFET Description This P-Channel 1.8 V specified MOSFET is a rugged gate version www.onsemi.com of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V 8 V). VDSS RDS(on) MAX ID MAX Features -20 V 8.5 mW @ -4.5 V -13.5 A 13.5

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS4435-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

FDS4435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

FDS4465-NL&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7

FDS4435BZ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D