Справочник MOSFET. FCPF11N60NT

 

FCPF11N60NT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF11N60NT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 27.4 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.299 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF11N60NT

 

 

FCPF11N60NT Datasheet (PDF)

 ..1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdf

FCPF11N60NT
FCPF11N60NT

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi

 ..2. Size:759K  onsemi
fcp11n60n fcpf11n60nt.pdf

FCPF11N60NT
FCPF11N60NT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:249K  inchange semiconductor
fcpf11n60nt.pdf

FCPF11N60NT
FCPF11N60NT

isc N-Channel MOSFET Transistor FCPF11N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 5.1. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdf

FCPF11N60NT
FCPF11N60NT

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu

 5.2. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdf

FCPF11N60NT
FCPF11N60NT

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

 5.3. Size:373K  fairchild semi
fcpf11n60f.pdf

FCPF11N60NT
FCPF11N60NT

November 2013FCPF11N60FN-Channel SuperFET FRFET MOSFET600 V, 11 A, 380 mFeatures Description 600 V @ TJ = 150C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 mutilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns)resistanc

 5.4. Size:621K  fairchild semi
fcp11n60 fcpf11n60.pdf

FCPF11N60NT
FCPF11N60NT

December 2008 TMSuperFETFCP11N60/FCPF11N60General Description FeaturesSuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150Cfrom Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC)utilizing advanced charge balance mechanisms. L

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top