Справочник MOSFET. FDS9945-NL

 

FDS9945-NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS9945-NL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 11.7 nC
   trⓘ - Время нарастания: 3.3 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SO8

 Аналог (замена) для FDS9945-NL

 

 

FDS9945-NL Datasheet (PDF)

 ..1. Size:913K  cn vbsemi
fds9945-nl.pdf

FDS9945-NL
FDS9945-NL

FDS9945-NLwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 7.1. Size:73K  fairchild semi
fds9945.pdf

FDS9945-NL
FDS9945-NL

February 2001 FDS9945 60V N-Channel PowerTrench MOSFET General Description Features 3.5 A, 60 V. R = 0.100 @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have been R = 0.200 @ V = 4.5V DS(ON) GSdesigned specifically to improve the overall efficiency of DC/DC converters using either synchronous or Optimized for use in switching DC/DC converters co

 7.2. Size:169K  onsemi
fds9945.pdf

FDS9945-NL
FDS9945-NL

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 9.1. Size:162K  fairchild semi
fds9934c.pdf

FDS9945-NL
FDS9945-NL

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

 9.2. Size:339K  fairchild semi
fds9958.pdf

FDS9945-NL
FDS9945-NL

July 2007FDS9958tmDual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the RoHS

 9.3. Size:116K  fairchild semi
fds9926a.pdf

FDS9945-NL
FDS9945-NL

July 2003FDS9926ADual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 43 m @ VGS = 2.5 V.process. It has been optimized for power managementapplications with a wide range of gate drive voltage Optimized

 9.4. Size:292K  fairchild semi
fds9933bz.pdf

FDS9945-NL
FDS9945-NL

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

 9.5. Size:367K  fairchild semi
fds9933.pdf

FDS9945-NL
FDS9945-NL

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

 9.6. Size:63K  fairchild semi
fds9933a.pdf

FDS9945-NL
FDS9945-NL

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

 9.7. Size:549K  fairchild semi
fds9958 f085.pdf

FDS9945-NL
FDS9945-NL

November 2008FDS9958_F085Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the o

 9.8. Size:73K  fairchild semi
fds9953a.pdf

FDS9945-NL
FDS9945-NL

May 2001 FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 2.9 A, 30 V R = 130 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 200 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g

 9.9. Size:272K  onsemi
fds9934c.pdf

FDS9945-NL
FDS9945-NL

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:334K  onsemi
fds9958.pdf

FDS9945-NL
FDS9945-NL

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:854K  cn vbsemi
fds9926a.pdf

FDS9945-NL
FDS9945-NL

FDS9926Awww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

 9.12. Size:1522K  cn vbsemi
fds9933a.pdf

FDS9945-NL
FDS9945-NL

FDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

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