FDS9945-NL - описание и поиск аналогов

FDS9945-NL www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann

February 2001 FDS9945 60V N-Channel PowerTrench MOSFET General Description Features 3.5 A, 60 V. R = 0.100 @ V = 10 V DS(ON) GS These N Channel Logic Level MOSFET have been R = 0.200 @ V = 4.5V DS(ON) GS designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or Optimized for use in switching DC/DC converters co

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

March 2006 FDS9934C Complementary Features These dual N- and P-Channel enhancement mode Q1 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V power field effect transistors are produced using RDS(ON) = 43 m @ VGS = 2.5 V. Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching perf

July 2007 FDS9958 tm Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105m Features General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5A process that has been especially tailored to minimize the RoHS

July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET Features General Description These N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 43 m @ VGS = 2.5 V. process. It has been optimized for power management applications with a wide range of gate drive voltage Optimized

March 2008 FDS9933BZ tm Dual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46m Features General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A that has been especially tailored to minimize

September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.105 @ VGS = -2.5 V. process that has been especially tailored to minimize the on-state resistance and yet ma

November 2008 FDS9958_F085 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105m Features General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5A process that has been especially tailored to minimize the o

May 2001 FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 2.9 A, 30 V R = 130 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 200 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of g

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS9926A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

FDS9933A www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie