Справочник MOSFET. FQD20N06LE

 

FQD20N06LE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQD20N06LE
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.031(typ) Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для FQD20N06LE

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD20N06LE Datasheet (PDF)

 ..1. Size:772K  cn vbsemi
 fqd20n06le.pdf pdf_icon

FQD20N06LE

FQD20N06LEwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 5.1. Size:664K  fairchild semi
 fqd20n06l fqu20n06l.pdf pdf_icon

FQD20N06LE

May 2001TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es

 5.2. Size:855K  fairchild semi
 fqd20n06l.pdf pdf_icon

FQD20N06LE

Mar 2009TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es

 6.1. Size:745K  fairchild semi
 fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf pdf_icon

FQD20N06LE

January 2009QFETFQD20N06 / FQU20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especi

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History: STN4260 | HMS60N10D | PK5G6EA | FDS6680S | IRF7478PBF-1 | ZXM64N035L3

 

 
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