Справочник MOSFET. FR9N20D

 

FR9N20D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FR9N20D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 96 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 10 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 50 ns
   Выходная емкость (Cd): 180 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.245(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для FR9N20D

 

 

FR9N20D Datasheet (PDF)

 ..1. Size:1706K  cn vbsemi
 fr9n20d.pdf

FR9N20D FR9N20D

FR9N20Dwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 0.1. Size:126K  international rectifier
 irfr9n20d.pdf

FR9N20D FR9N20D

PD - 93919AIRFR9N20DSMPS MOSFET IRFU9N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.38 9.4ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIR

 0.2. Size:226K  international rectifier
 irfr9n20dpbf irfu9n20dpbf.pdf

FR9N20D FR9N20D

PD - 95376AIRFR9N20DPbFSMPS MOSFET IRFU9N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC convertersl Lead-Free 200V 0.38 9.4ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Cu

 0.3. Size:226K  infineon
 irfr9n20dpbf irfu9n20dpbf.pdf

FR9N20D FR9N20D

PD - 95376AIRFR9N20DPbFSMPS MOSFET IRFU9N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC convertersl Lead-Free 200V 0.38 9.4ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Cu

 0.4. Size:242K  inchange semiconductor
 irfr9n20d.pdf

FR9N20D FR9N20D

isc N-Channel MOSFET Transistor IRFR9N20D, IIRFR9N20DFEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

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