Справочник MOSFET. HM25P06K

 

HM25P06K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM25P06K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 38.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM25P06K

 

 

HM25P06K Datasheet (PDF)

 ..1. Size:883K  cn vbsemi
 hm25p06k.pdf

HM25P06K HM25P06K

HM25P06Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Con

 ..2. Size:1028K  cn hmsemi
 hm25p06k.pdf

HM25P06K HM25P06K

HM25P06KP-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.1. Size:829K  1
 hm25p06d.pdf

HM25P06K HM25P06K

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.2. Size:829K  cn hmsemi
 hm25p06d.pdf

HM25P06K HM25P06K

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 8.1. Size:969K  cn hmsemi
 hm25p04k.pdf

HM25P06K HM25P06K

HM25P04KP-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)

 8.2. Size:1222K  cn hmsemi
 hm25p04d.pdf

HM25P06K HM25P06K

HM25P04DP-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)

 8.3. Size:840K  cn hmsemi
 hm25p03k.pdf

HM25P06K HM25P06K

HM25P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM25P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -25A D SRDS(ON)

 8.4. Size:563K  cn hmsemi
 hm25p03q.pdf

HM25P06K HM25P06K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)

 8.5. Size:554K  cn hmsemi
 hm25p03d.pdf

HM25P06K HM25P06K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)

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