Справочник MOSFET. HM4410

 

HM4410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM4410
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008(typ) Ohm
   Тип корпуса: SO8

 Аналог (замена) для HM4410

 

 

HM4410 Datasheet (PDF)

 ..1. Size:1936K  cn vbsemi
 hm4410.pdf

HM4410 HM4410

HM4410www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 ..2. Size:465K  cn hmsemi
 hm4410.pdf

HM4410 HM4410

HM441030V N-Channel Enhancement-Mode MOSFET 30V N MOS VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0m RDS(ON), Vgs@4.5V, Ids@10A = 12m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current

 0.1. Size:135K  chenmko
 chm4410bjgp.pdf

HM4410 HM4410

CHENMKO ENTERPRISE CO.,LTDCHM4410BJPTSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High pow

 0.2. Size:99K  chenmko
 chm4410ajgp.pdf

HM4410 HM4410

CHENMKO ENTERPRISE CO.,LTDCHM4410AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 0.3. Size:556K  cn hmsemi
 hm4410b.pdf

HM4410 HM4410

HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =12A RDS(ON)

 0.4. Size:607K  cn hmsemi
 hm4410a.pdf

HM4410 HM4410

HM4410A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =12A RDS(ON)

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