IRF610P - параметры транзистора MOSFET, его аналоги, datasheet

IRF610P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: IRF610P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13(max) nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85(typ) Ohm
   Тип корпуса: TO220AB

Аналог (замена) для IRF610P

IRF610P Datasheet (PDF)

..1. Size:2973K cn vbsemi
irf610p.pdf

IRF610Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DGG

0.1. Size:202K international rectifier
irf610pbf.pdf

IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

8.1. Size:107K 1
irf610 irf611 irf612 irf613 mtp2n18 mtp2n20.pdf

8.2. Size:178K international rectifier
irf610s.pdf

8.3. Size:174K international rectifier
irf610.pdf

8.4. Size:618K international rectifier
irf6100pbf.pdf

PD - 96012BIRF6100PbFHEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (

8.5. Size:199K international rectifier
irf610spbf.pdf

IRF610S, SiHF610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of Paralleling Simple Drive R

8.6. Size:636K international rectifier
irf6100.pdf

PD - 93930FIRF6100HEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (

8.7. Size:173K international rectifier
irf610l irf610lpbf.pdf

IRF610S, SiHF610S, IRF610L, SiHF610Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Available in tape and reelRDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 8.2 Repetitive avalanche ratedQgs (nC) 1.8 Fast switchingAvailableQgd (nC) 4.5 Ease of parallelingConfiguration Sing

8.8. Size:866K fairchild semi
irf610b.pdf

IRF610B/IRFS610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fast switch

8.9. Size:148K fairchild semi
irf610.pdf

8.10. Size:930K samsung
irf610a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

8.11. Size:202K vishay
irf610 sihf610.pdf