IRF640P - описание и поиск аналогов

 ..1. Size:2053K  cn vbsemi
 irf640p.pdf 

IRF640P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-Chan

 0.1. Size:2211K  international rectifier
 irf640pbf.pdf 

PD - 94930 IRF640PbF Lead-Free 1/8/04 Document Number 91036 www.vishay.com 1 IRF640PbF Document Number 91036 www.vishay.com 2 IRF640PbF Document Number 91036 www.vishay.com 3 IRF640PbF Document Number 91036 www.vishay.com 4 IRF640PbF Document Number 91036 www.vishay.com 5 IRF640PbF Document Number 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline D

 0.2. Size:197K  vishay
 irf640pbf sihf640.pdf 

IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC

 8.1. Size:317K  1
 irf640 irf640fi.pdf 

 8.2. Size:109K  motorola
 irf640.rev1.pdf 

ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

 8.3. Size:155K  international rectifier
 irf640n.pdf 

PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15 Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processi

 8.4. Size:336K  international rectifier
 irf640nlpbf irf640npbf irf640nspbf.pdf 

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif

 8.5. Size:336K  international rectifier
 irf640npbf irf640nspbf irf640nlpbf.pdf 

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif

 8.6. Size:228K  international rectifier
 irf640s.pdf 

PD -90902B IRF640S/L HEXFET Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18 150 C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best co

 8.7. Size:178K  international rectifier
 irf640.pdf 

 8.8. Size:935K  international rectifier
 irf640s-l.pdf 

PD - 95113 IRF640S/LPbF Lead-Free 3/16/04 Document Number 91037 www.vishay.com 1 IRF640S/LPbF Document Number 91037 www.vishay.com 2 IRF640S/LPbF Document Number 91037 www.vishay.com 3 IRF640S/LPbF Document Number 91037 www.vishay.com 4 IRF640S/LPbF Document Number 91037 www.vishay.com 5 IRF640S/LPbF Document Number 91037 www.vishay.com 6 IRF640S/LPbF Docum

 8.9. Size:97K  philips
 irf640 s 1.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technolog

 8.10. Size:332K  st
 irf640 irf640fp.pdf 

IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V

 8.11. Size:107K  st
 irf640f fp.pdf 

IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V

 8.12. Size:330K  st
 irf640fp.pdf 

IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V

 8.13. Size:57K  st
 irf640.pdf 

IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V

 8.14. Size:916K  fairchild semi
 irf640b irfs640b.pdf 

 8.15. Size:128K  fairchild semi
 irf640 rf1s640 rf1s640sm.pdf 

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

 8.16. Size:942K  samsung
 irf640a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 8.17. Size:196K  vishay
 irf640lpbf irf640spbf sihf640l sihf640s.pdf 

IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.18 Low-Profile Through-Hole Qg (Max.) (nC) 70 Available in Tape and Reel Qgs (nC) 13 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 39 Fast Swi

 8.18. Size:209K  vishay
 irf640s sihf640s sihf640l.pdf 

 8.19. Size:196K  vishay
 irf640 sihf640.pdf 

IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC

 8.20. Size:51K  harris semi
 irf640 irf641 irf642 irf643 rf1s640.pdf 

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guar

 8.21. Size:976K  wietron
 irf640.pdf 

IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)

 8.22. Size:760K  blue-rocket-elect
 irf640.pdf 

IRF640 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

 8.23. Size:596K  nell
 irf640h.pdf 

RoHS IRF640 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. D D They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia

 8.24. Size:872K  slkor
 irf640.pdf 

IRF640 N-Channel MOSFET Transistor FEATURES Static drain-source on-resistance TO-220 RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.25. Size:723K  cn evvo
 irf640n.pdf 

IRF640N N-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excel

 8.26. Size:617K  cn minos
 irf640ns.pdf 

Silicon N-Channel Power MOSFET Description IRF640NS, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Schematic diagram V =200V,I =18A

 8.27. Size:245K  inchange semiconductor
 irf640n.pdf 

isc N-Channel MOSFET Transistor IRF640N IIRF640N FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

 8.28. Size:228K  inchange semiconductor
 irf640ns.pdf 

Isc N-Channel MOSFET Transistor IRF640NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.29. Size:183K  inchange semiconductor
 irf640.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc

 8.30. Size:244K  inchange semiconductor
 irf640nl.pdf 

Isc N-Channel MOSFET Transistor IRF640NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR