IRF7309TRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7309TRPBF
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 6.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.018(typ) Ohm
Тип корпуса: SO8
Аналог (замена) для IRF7309TRPBF
IRF7309TRPBF Datasheet (PDF)
irf7309trpbf.pdf
IRF7309TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at
irf7309trpbf-1.pdf
IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A
irf7309qpbf.pdf
PD - 96135AIRF7309QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8 N-Ch P-Chl Dual N and P Channel MOSFETS1 D1l Surface Mount2 7G1 D1l Available in Tape & ReelVDSS 30V -30V3 6l 150C Operating TemperatureS2 D2l Lead-Free45RDS(on) 0.050 0.10G2 D2P-CHANNEL MOSFETDescriptionTop ViewThese HEXF
irf7309.pdf
PD - 9.1243BIRF7309PRELIMINARYHEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low On-Resistance1 8 N-Ch P-ChS1 D1Dual N and P Channel Mosfet2 7G1 D1Surface MountVDSS 30V -30VAvailable in Tape & Reel 3 6S2 D2Dynamic dv/dt Rating45G2 D2Fast SwitchingP-CHANNEL MOSFET RDS(on) 0.050 0.10Top ViewDescriptionFifth Generation HEXFET
irf7309pbf-1.pdf
IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind
irf7309ipbf.pdf
PD - 96086IRF7309IPbF Lead-FreeDescriptionwww.irf.com 107/07/06IRF7309IPbF2 www.irf.comIRF7309IPbFwww.irf.com 3IRF7309IPbF4 www.irf.comIRF7309IPbFwww.irf.com 5IRF7309IPbF6 www.irf.comIRF7309IPbFwww.irf.com 7IRF7309IPbF8 www.irf.comIRF7309IPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .