IRF7475TRP - Даташиты. Аналоги. Основные параметры

IRF7475TRP www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

PD - 94531A IRF7475 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8

PD - 95278 IRF7475PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Characterized Avalanche Voltage

PD - 94311 IRF7476 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency 3.3V and 5V input Point- 12V 8.0m @VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D 2 7 S D Benefits 3 6 S D Ultra-Low Gate Impedance 4 5 G D

PD- 95559 IRF7473PbF HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID input DC-DC converters l Motor Control 100V 26mW@VGS = 10V 6.9A l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance A A 1 8 l High Speed Switching S D l Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D l Imp

PD- 93913C IRF7470 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A Benefits Ultra-Low Gate Impedance A A Very Low RDS(on) at 4.5V VGS 1 8 S D 2 7 Fully Characterized Avalanche Voltage S D and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Paramet

PD- 94037A IRF7473 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters 100V 26m @VGS = 10V 6.9A Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Im

IRF7473PbF-1 HEXFET Power MOSFET A VDS 100 V A 1 8 S D RDS(on) max 26 m 2 7 (@V = 10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 6.9 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

PD- 96128 SMPS MOSFET IRF7478QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N Channel MOSFET 60V 26@VGS = 10V 4.2A l Surface Mount 30@VGS = 4.5V 3.5A l Available in Tape & Reel l 150 C Operating Temperature l Automotive [Q101] Qualified A A l Lead-Free 1 8 S D Description 2 7 S D Specifically designed for Autom

PD- 95334 IRF7477PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max (mW) ID Converters for Computers and 30V 8.5@VGS = 10V 14A Communications 10@VGS = 4.5V 11A l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) S D l Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8

PD- 94094A IRF7477 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High Frequency Synchronous Buck 30V 8.5@VGS = 10V 14A Converters for Computers and 10@VGS = 4.5V 11A Communications Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G

PD- 95726 SMPS MOSFET IRF7471PbF Applications l High Frequency Isolated DC-DC HEXFET Power MOSFET Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use l High Frequency Buck Converters for 40V 13m 10A Computer Processor Power l Lead-Free Benefits A A 1 8 l Ultra-Low Gate Impedance S D l Very Low RDS(on) 2 7 S D l Fully Characte

PD- 94055A IRF7478 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High frequency DC-DC converters 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D A

IRF7478PbF-1 SMPS MOSFET HEXFET Power MOSFET A VDS 60 V A 1 8 S D RDS(on) max 26 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 30 (@V = 4.5V) GS 4 5 G D Qg (typical) 21 nC ID SO-8 7.0 A Top View (@T = 25 C) A Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible wit

PD- 95276 IRF7470PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A l Lead-Free Benefits l Ultra-Low Gate Impedance A A 1 8 l Very Low RDS(on) at 4.5V VGS S D 2 7 S D l Fully Characterized Avalanche Voltage and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Rati

PD- 94097 IRF7474 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V 100V 63m @VGS = 10V 4.5A input DC-DC converters Motor Control Uninterruptible Power Supply Benefits A Low On-Resistance A 1 8 S D High Speed Switching 2 7 Low Gate Drive Current Due to Improved S D Gate Charge Characteristic 3 6 S D Improv

PD- 94036B SMPS MOSFET IRF7471 Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 40V 13m 10A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Volt

AUTOMOTIVE GRADE AUIRF7478Q Features HEXFET Power MOSFET Advanced Planar Technology A A V(BR)DSS 1 8 60V Low On-Resistance S D Logic Level Gate Drive 2 7 S D RDS(on) typ. 20m Dynamic dV/dT Rating 3 6 S D 150 C Operating Temperature max. 26m Fast Switching 4 5 G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,

PD - 95279 IRF7476PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency 3.3V and 5V input Point- 12V 8.0mW@VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO

PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max (mW) ID l High frequency DC-DC converters 60V 26@VGS = 10V 4.2A l Lead-Free 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D l Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D App. Note

SMD Type MOSFET N-Channel MOSFET IRF7476 (KRF7476) SOP-8 Features VDS (V) = 12V ID = 15 A (VGS = 10V) 1.50 0.15 RDS(ON) 8m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.8V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain

IRF7470TRPBF&-10 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous

IRF7473TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

IRF7478TR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL

IRF7471TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF7473TRPBF FEATURES With SOP-8 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB