IRF830ASTRL - аналоги, параметры транзистора - Справочник транзисторов

IRF830ASTRL даташит

..1. Size:880K cn vbsemi
irf830astrl.pdf pdf_icon

IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd

6.1. Size:155K international rectifier
irf830as.pdf pdf_icon

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

6.2. Size:676K international rectifier
irf830aspbf irf830alpbf.pdf pdf_icon

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Vol

6.3. Size:207K vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf pdf_icon

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 24 Requirement Qgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterize

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