IRFR15N20DTR - параметры транзистора MOSFET, его аналоги, datasheet

IRFR15N20DTR Datasheet (PDF)

..1. Size:1603K cn vbsemi
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IRFR15N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

4.1. Size:225K international rectifier
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PD - 95355AIRFR15N20DPbFSMPS MOSFET IRFU15N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.165 17Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-P

4.2. Size:230K international rectifier
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PD - 94245IRFR15N20DSMPS MOSFET IRFU15N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.165 17ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

4.3. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20DFEATURESStatic drain-source on-resistance:RDS(on)165mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Другие MOSFET... IRFL9110TRPBF , IRFR024NTR , IRFR110TR , IRFR1205TR , IRFR120NTRPBF , IRFR120TR , IRFR13N15DTR , IRFR13N20DTR , 2SK3568 , IRFR2307ZTR , IRFR310P , IRFR310T , IRFR3410TR , IRFR3411TR , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT .