IRFR310P - Даташиты. Аналоги. Основные параметры

IRFR310Pwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

PD - 95028AIRFR310PbFIRFU310PbF Lead-Free12/10/04Document Number: 91272 www.vishay.com1IRFR/U310PbFDocument Number: 91272 www.vishay.com2IRFR/U310PbFDocument Number: 91272 www.vishay.com3IRFR/U310PbFDocument Number: 91272 www.vishay.com4IRFR/U310PbFDocument Number: 91272 www.vishay.com5IRFR/U310PbFDocument Number: 91272 www.vishay.com6IRFR/U3

IRFR310, IRFU310, SiHFR310, SiHFU310www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310)Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast SwitchingQgd (nC) 6.5 Ful

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

IRFR310, IRFU310, SiHFR310, SiHFU310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* Surface Mount (IRFR310/SiHFR310)Qg (Max.) (nC) 12COMPLIANT Straight Lead (IRFU310/SiHFU310)Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5Configuration S

IRFR310Twww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

iscN-Channel MOSFET Transistor IRFR310FEATURESLow drain-source on-resistance:RDS(ON) 3.6 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER