IRFR3910TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

PD - 91364BIRFR/U3910HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR3910)VDSS = 100V Straight Lead (IRFU3910) Advanced Process TechnologyRDS(on) = 0.115 Fast SwitchingG Fully Avalanche RatedID = 16ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resi

PD - 95079AIRFR3910PbFIRFU3910PbF Lead-Freewww.irf.com 11/7/05IRFR/U3910PbF2 www.irf.comIRFR/U3910PbFwww.irf.com 3IRFR/U3910PbF4 www.irf.comIRFR/U3910PbFwww.irf.com 5IRFR/U3910PbF6 www.irf.comIRFR/U3910PbFwww.irf.com 7IRFR/U3910PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910FEATURESStatic drain-source on-resistance:RDS(on)115mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat