IRFR4105ZTR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFR4105ZTR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 11 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.031 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR4105ZTR
IRFR4105ZTR Datasheet (PDF)
irfr4105ztr.pdf
IRFR4105ZTRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
auirfr4105ztr.pdf
PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de
irfr4105zpbf irfu4105zpbf.pdf
PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
irfr4105zpbf irfu4105zpbf.pdf
PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
auirfr4105z auirfu4105z.pdf
AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed
irfr4105z.pdf
isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105ZFEATURESStatic drain-source on-resistance:RDS(on)24.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55
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