Справочник MOSFET. IRFR540ZTRPBF

 

IRFR540ZTRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR540ZTRPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR540ZTRPBF

 

 

IRFR540ZTRPBF Datasheet (PDF)

 ..1. Size:856K  cn vbsemi
 irfr540ztrpbf.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

IRFR540ZTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

 6.1. Size:353K  international rectifier
 irfr540zpbf irfu540zpbf.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

PD - 96141BIRFR540ZPbFFeaturesIRFU540ZPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl 175C Operating TemperatureDl Fast SwitchingVDSS = 100Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-Freel Halogen-FreeRDS(on) = 28.5mGDescriptionID = 35AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achiev

 6.2. Size:285K  international rectifier
 auirfr540z auirfu540z.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

AUTOMOTIVE GRADEAUIRFR540ZAUIRFU540ZHEXFET Power MOSFETVDSS 100VDDRDS(on) typ. 22.5mS max. 28.5m SDGGGID 35AD-Pak I-PakSAUIRFR540Z AUIRFU540ZApplicationsl Automatic Voltage Regulator (AVR) GDSl Solenoid Injection Gate Drain Sourcel Body Controll Low Power Automotive ApplicationsStandard PackBase part number Package Type Orderable Part Number

 6.3. Size:725K  infineon
 auirfr540z auirfu540z.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates

 6.4. Size:856K  cn vbsemi
 irfr540zpbf.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

IRFR540ZPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.5. Size:242K  inchange semiconductor
 irfr540z.pdf

IRFR540ZTRPBF IRFR540ZTRPBF

isc N-Channel MOSFET Transistor IRFR540Z, IIRFR540ZFEATURESStatic drain-source on-resistance:RDS(on)28.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Ga

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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