Справочник MOSFET. IRFZ44RP

 

IRFZ44RP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFZ44RP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 66(max) nC
   trⓘ - Время нарастания: 230 ns
   Cossⓘ - Выходная емкость: 920 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0244(typ) Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRFZ44RP

 

 

IRFZ44RP Datasheet (PDF)

 ..1. Size:1160K  cn vbsemi
 irfz44rp.pdf

IRFZ44RP IRFZ44RP

IRFZ44RPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.1. Size:221K  international rectifier
 irfz44rpbf.pdf

IRFZ44RP IRFZ44RP

PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation

 0.2. Size:1289K  vishay
 irfz44r irfz44rpbf sihfz44r.pdf

IRFZ44RP IRFZ44RP

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

 7.1. Size:153K  international rectifier
 irfz44r.pdf

IRFZ44RP IRFZ44RP

PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

 7.2. Size:1287K  vishay
 irfz44r sihfz44r.pdf

IRFZ44RP IRFZ44RP

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

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