IRFZ48NP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ48NP
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 66(max) nC
Время нарастания (tr): 230 ns
Выходная емкость (Cd): 920 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.024(typ) Ohm
Тип корпуса: TO220AB
IRFZ48NP Datasheet (PDF)
irfz48np.pdf
IRFZ48NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
irfz48npbf.pdf
PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
irfz48npbf.pdf
PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
irfz48n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s
irfz48ns irfz48nl.pdf
PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie
irfz48n.pdf
PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
irfz48nlpbf.pdf
IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS
irfz48n 1.pdf
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s
irfz48nspbf irfz48nlpbf.pdf
IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS
auirfz48n.pdf
PD - 97732AUTOMOTIVE GRADEAUIRFZ48NHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.11ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 14ml Fast SwitchingSID69Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDesc
irfz48ns.pdf
isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
irfz48n.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
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