IRLML2030TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLML2030TR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 5.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.5 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 45 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
Тип корпуса: SOT23
Аналог (замена) для IRLML2030TR
IRLML2030TR Datasheet (PDF)
irlml2030trpbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2030trpbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2030trpbf.pdf
Product specificationIRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques
irlml2030tr.pdf
IRLML2030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
irlml2030pbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2060pbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2060trpbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2060trpbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2060tr.pdf
IRLML2060TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)
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