IRLML6401GTRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLML6401GTRPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 4.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 180 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035(typ) Ohm
Тип корпуса: SOT23
Аналог (замена) для IRLML6401GTRPBF
IRLML6401GTRPBF Datasheet (PDF)
irlml6401gtrpbf.pdf
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IRLML6401GTRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT
irlml6401gpbf.pdf
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PD - 96160IRLML6401GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (
irlml6401.pdf
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PD- 93756CIRLML6401HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 FootprintG 1 Low Profile (
irlml6401pbf-1.pdf
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IRLML6401PbF-1HEXFET Power MOSFETVDS -12 VRDS(on) max G 10.05 (@V = -4.5V)GSQg (typical) 10 nC 3 DID -4.3 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlml6401pbf.pdf
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IRLML6401PbFl Ultra Low On-Resistance HEXFET Power MOSFETl P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml6401pbf-1.pdf
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IRLML6401PbF-1HEXFET Power MOSFETVDS -12 VRDS(on) max G 10.05 (@V = -4.5V)GSQg (typical) 10 nC 3 DID -4.3 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlml6401.pdf
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an
irlml6401.pdf
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Product specificationIRLML6401PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (
irlml6401.pdf
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SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
irlml6401-3.pdf
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SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1 2+0.02+0.10.15 -0.020.95-0.1+0.11.9 -0.21.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol
irlml6401 krlml6401.pdf
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SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
irlml6401.pdf
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IRLML6401P-Channel Enhancement Mode Field Effect Transistor D IDV(BR)DSS RDS(on)MAX G m@-10V60S Equivalent Circuit -30V 70 m -4.2A @-4.5Vm@-2.5V85FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN DAPPLICATION Load Switch for Portable Devic
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RUMWp UMW IRLML6401UMW IRLML6401UMW IRLML6401TyP-Channel Enhancement MOSFET FeaturesSOT23 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1. BASE 2. EMITTER MARKING3. COLLECTOR1F MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8 Continuous Drain Cu
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IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved
irlml6401.pdf
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IRLML6401P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -16V/-3A, R = 110m(MAX) @V = -4.5V.DS(ON) GS R = 140m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSOT-23 SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless
irlml6401.pdf
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IRLML6401 P-Channel Enhancement MOSFETRoHS Device Halogen Free SOT-23 FeatureslUltra Low On-ResistancelP-Channel MOSFETl SOT-23 Footprintl Low Profile (
irlml6401trpbf.pdf
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IRLML6401TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
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