IRLML9301TR - описание и поиск аналогов

PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max 20 V G 1 RDS(on) max 64 m 3 D (@VGS = -10V) RDS(on) max S 2 103 m Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9301TRPbF Application(s) System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( 64m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatibl

Product specification IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max 20 V G 1 RDS(on) max 64 m 3 D (@VGS = -10V) RDS(on) max S 2 103 m Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9301TRPbF Application(s) System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( 64m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility

IRLML9301TR www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

PD - 97519B IRLML9303TRPbF HEXFET Power MOSFET VDS -30 V VGS Max 20 V RDS(on) max 165 m (@VGS = -10V) RDS(on) max 270 m Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9303TRPbF Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Eas

Product specification IRLML9303TRPbF HEXFET Power MOSFET VDS -30 V VGS Max 20 V RDS(on) max 165 m (@VGS = -10V) RDS(on) max 270 m Micro3TM (SOT-23) (@VGS = -4.5V) IRLML9303TRPbF Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques resu

IRLML2402PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

PD - 97631 IRLML2244TRPbF HEXFET Power MOSFET VDS -20 V VGS Max 12 V G 1 RDS(on) max 54 m 3 D (@VGS = -4.5V) RDS(on) max 2 S 95 m Micro3TM (SOT-23) (@VGS = -2.5V) IRLML2244TRPbF Application(s) System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( 54m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatib

PD - 97448A IRLML2060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 480 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 640 m IRLML2060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

PD - 9.1260D IRLML5103 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (

IRLML5103PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET G 1 l SOT-23 Footprint VDSS = -30V l Low Profile (

PD - 96160 IRLML6401GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

PD - 96278B IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compati

PD - 96164A IRLML2803GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 30V l SOT-23 Footprint 3 D l Low Profile (

PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout Multi-vend

PD - 96161A IRLML6402GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

PD- 93756C IRLML6401 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (

PD - 93757B IRLML2502 HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (

PD - 97448A IRLML2060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 480 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 640 m IRLML2060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

IRLML2402PbF-1 HEXFET Power MOSFET VDS 20 V G 1 RDS(on) max 0.25 (@V = 4.5V) GS 3 D Qg (typical) 2.6 nC ID S 2 1.2 A (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

PD - 96163A IRLML2502GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 92 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 116 m IRLML0060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

PD - 9.1257C IRLML2402 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (

PD - 96159 IRLML6302GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

PD - 97529A IRLML6246TRPbF HEXFET Power MOSFET VDS 20 V G 1 VGS Max 12 V RDS(on) max 3 D 46 m (@VGS = 4.5V) RDS(on) max S 2 Micro3TM (SOT-23) 66 m IRLML6246TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no h

PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide an

IRLML0100PbF-1 HEXFET Power MOSFET VDS 100 V RDS(on) max G 1 220 m (@V = 10V) GS Qg (typical) 2.5 nC 3 D ID 1.6 A (@T = 25 C) A S 2 Micro3TM (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

PD- 93755 IRLML6402 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel MOSFET SOT-23 Footprint VDSS = -20V Low Profile (

PD - 97432 IRLML2030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max G 1 20 V RDS(on) max 3 D 100 m (@VGS = 10V) RDS(on) max 2 S Micro3TM (SOT-23) 154 m IRLML2030TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

IRLML0030PbF-1 HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier M

IRLML6401PbF-1 HEXFET Power MOSFET VDS -12 V RDS(on) max G 1 0.05 (@V = -4.5V) GS Qg (typical) 10 nC 3 D ID -4.3 A S 2 (@T = 25 C) A Micro3 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

PD - 94947B IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

IRLML6402PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max G 1 0.065 (@V = -4.5V) GS Qg (typical) 8.0 nC 3 D ID -3.7 A S 2 (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (

PD - 97157 IRLML0100TRPbF HEXFET Power MOSFET VDS 100 V G 1 VGS Max 16 V RDS(on) max 3 D 220 m (@VGS = 10V) S 2 RDS(on) max Micro3TM (SOT-23) 235 m IRLML0100TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extre

IRLML2803PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 30V l Low Profile (

IRLML6401PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

PD - 97535A IRLML6244TRPbF HEXFET Power MOSFET VDS 20 V VGS Max 12 V RDS(on) max 21.0 m (@VGS = 4.5V) RDS(on) max 27.0 m Micro3TM (SOT-23) (@VGS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) (

PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance G 1 l P-Channel MOSFET VDSS = -30V l SOT-23 Footprint 3 D l Low Profile (

PD - 97529A IRLML6246TRPbF HEXFET Power MOSFET VDS 20 V G 1 VGS Max 12 V RDS(on) max 3 D 46 m (@VGS = 4.5V) RDS(on) max S 2 Micro3TM (SOT-23) 66 m IRLML6246TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no h

PD - 96166 IRLML5203GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremel

PD - 97157 IRLML0100TRPbF HEXFET Power MOSFET VDS 100 V G 1 VGS Max 16 V RDS(on) max 3 D 220 m (@VGS = 10V) S 2 RDS(on) max Micro3TM (SOT-23) 235 m IRLML0100TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

PD - 96278B IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compati

PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide an

PD - 97432 IRLML2030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max G 1 20 V RDS(on) max 3 D 100 m (@VGS = 10V) RDS(on) max 2 S Micro3TM (SOT-23) 154 m IRLML2030TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in

IRLML2502PbF-1 HEXFET Power MOSFET VDS 20 V RDS(on) max G 1 0.045 (@V = 4.5V) GS Qg (typical) 8.0 nC 3 D ID 4.2 A S 2 (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

PD - 9.1258C IRLML2803 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 30V SOT-23 Footprint Low Profile (

IRLML2803PbF-1 HEXFET Power MOSFET VDS 30 V RDS(on) max G 1 0.25 (@V = 10V) GS Qg (typical) 3.3 nC 3 D ID 1.2 A S 2 (@T = 25 C) A Micro3 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industr

IRLML5203PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Surface Mount l Available in Tape & Reel -30V 98@VGS = -10V -3.0A l Low Gate Charge 165@VGS = -4.5V -2.6A l Lead-Free l RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext

IRLML6402PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

PD - 96162A IRLML2402GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 20V l SOT-23 Footprint 3 D l Low Profile (

PD - 97535A IRLML6244TRPbF HEXFET Power MOSFET VDS 20 V VGS Max 12 V RDS(on) max 21.0 m (@VGS = 4.5V) RDS(on) max 27.0 m Micro3TM (SOT-23) (@VGS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) (

IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V G 1 VGS Max 12 V RDS(on) max 3 D 29 m (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 m IRLML6344TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Benefits Low RDSon (

IRLML5203PbF-1 HEXFET Power MOSFET VDS -30 V RDS(on) max 98 G 1 (@V = -10V) GS m RDS(on) max 165 3 D (@V = -4.5V) GS Qg (typical) 9.5 nC S 2 ID -3.0 A Micro3TM (@T = 25 C) A Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Env

IRLML2246PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max G 1 135 m (@V = -4.5V) GS 3 D Qg (typical) 2.9 nC ID -2.6 A S 2 (@T = 25 C) A Micro3TM (SOT-23) IRLML2246TRPbF-1 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmenta

IRLML6302PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max 0.60 G 1 (@V = -4.5V) GS Qg (typical) 2.4 nC 3 D ID -0.78 A (@T = 25 C) A S 2 Micro3TM Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, In

PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout Multi-vend

IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V G 1 VGS Max 12 V RDS(on) max 3 D 29 m (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 m IRLML6344TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Benefits Low RDSon (

PD - 97630A IRLML2246TRPbF HEXFET Power MOSFET VDS -20 V VGS Max 12 V RDS(on) max 135 m (@VGS = -4.5V) RDS(on) max Micro3TM (SOT-23) 236 m IRLML2246TRPbF (@VGS = -2.5V) Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 92 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 116 m IRLML0060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l D l l l l G l S l Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402 Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (

Product specification IRLML2244TRPbF HEXFET Power MOSFET VDS -20 V VGS Max 12 V G 1 RDS(on) max 54 m 3 D (@VGS = -4.5V) RDS(on) max 2 S 95 m Micro3TM (SOT-23) (@VGS = -2.5V) IRLML2244TRPbF Application(s) System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( 54m ) Lower switching losses Industry-standard pinout Multi-vendor compatibilit

Product specification IRLML6401PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

Product specification IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

Product specification IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V G 1 VGS Max 12 V RDS(on) max 3 D 29 m (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 m IRLML6344TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Benefits Low RDSon (

Product specification IRLML6402PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

Product specification IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

Product specification IRLML6244TRPbF HEXFET Power MOSFET VDS 20 V VGS Max 12 V RDS(on) max 21.0 m (@VGS = 4.5V) RDS(on) max 27.0 m Micro3TM (SOT-23) (@VGS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) (

Product specification IRLML6246TRPbF HEXFET Power MOSFET VDS 20 V G 1 VGS Max 12 V RDS(on) max 3 D 46 m (@VGS = 4.5V) RDS(on) max S 2 Micro3TM (SOT-23) 66 m IRLML6246TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromid

Product specification IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibilit

Product specification IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 12 V RDS(on) max 63 m (@VGS = 4.5V) RDS(on) max Micro3TM (SOT-23) 80 m IRLML6346TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no

Product specification IRLML2030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max G 1 20 V RDS(on) max 3 D 100 m (@VGS = 10V) RDS(on) max 2 S Micro3TM (SOT-23) 154 m IRLML2030TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques

Product specification IRLML5203PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 98@VGS = -10V -3.0A l Surface Mount 165@VGS = -4.5V -2.6A l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the

Product specification IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout

Product specification IRLML2246TRPbF HEXFET Power MOSFET VDS -20 V VGS Max 12 V RDS(on) max 135 m (@VGS = -4.5V) RDS(on) max Micro3TM (SOT-23) 236 m IRLML2246TRPbF (@VGS = -2.5V) Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques result

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

SMD Type MOSFET N-Channel MOSFET IRLML2502 (KRLML2502) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 4.2 A 1 2 RDS(ON) 45m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 RDS(ON) 80m (VGS = 2.5V) 1.9 -0.1 Fast Switching 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symb

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. 1 2 +0.1 +0.05 0.95 -0.1 Low profile( 1.1mm). 0.1 -0.01 +0.1 1.9 -0.1 Available in tape and reel. Fast switching. 1.Base 1. Gate 2.Emitter 2. Source 3

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ultra low on-resistance. P-Channel MOSFET. 1 2 SOT-23 Footprint. +0.02 +0.1 0.15 -0.02 0.95-0.1 Low profile( 1.1mm). +0.1 1.9 -0.2 Available in tape and reel. Fast switching. 1.Base 1. Gate 2.Emitter 2. Source

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.02 +0.1 RDS(ON) 250m (VGS = 4.5V) 0.15 -0.02 0.95 -0.1 +0.1 D 1.9-0.2 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9 -0.2 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type MOSFET N-Channel MOSFET IRLML0100 (KRLML0100) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 1.6A (VGS = 10V) 1 2 +0.1 +0.05 RDS(ON) 220m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 G 1 RDS(ON) 235m (VGS = 4.5V) 3 D 1. Gate 2. Source 3. Drain S 2 Absolute Maximum Ratings Ta = 25 Parameter S

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symb

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

SMD Type MOSFET N-Channel MOSFET IRLML0100 (KRLML0100) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 100V ID = 1.6A (VGS = 10V) 1 2 +0.02 +0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 RDS(ON) 235m (VGS = 4.5V) 3 D 1. Gate 2. Source S 2 3. Drain Absolute Maximum Ratings Ta = 25 Param

IRLML6401 P-Channel Enhancement Mode Field Effect Transistor D ID V(BR)DSS RDS(on)MAX G m @-10V 60 S Equivalent Circuit -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN D APPLICATION Load Switch for Portable Devic

IRLML6402 LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (

R UMWp UMW IRLML6401 UMW IRLML6401 UMW IRLML6401 Ty P-Channel Enhancement MOSFET Features SOT 23 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1. BASE 2. EMITTER MARKING 3. COLLECTOR 1F MK Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 Continuous Drain Cu

R UMW UMW IRLML2502 UMW IRLML2502 UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET UMW IRLML2502 ID SOT-23 V(BR)DSS RDS(on)MAX 45m @4.5V 20V 4.2A 1. GATE 80 m @2.5V 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MK Maximum ratin

R UMW UMW IRLML6402 UMW IRLML6402 UMW IRLML6402 P-Channel Enhancement MOSFET SOT 23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile( 1.1mm). Available in tape and reel. 1. BASE Fast switching. 2. EMITTER 3. COLLECTOR MARKING 1E MK Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

R UMW UMW IRLML5203 UMW IRLML5203 UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS SOT 23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX 85m @-10 V 1. BASE -3. 0A -30V 145m @-4.5V 2. EMITTER 3. COLLECTOR General Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved

IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili

IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a

IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

IRLML6401 P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -16V/-3A, R = 110m (MAX) @V = -4.5V. DS(ON) GS R = 140m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 SOT-23 for Surface Mount Package Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless

IRLML2402 N-Channel Enhancement Mode MOSFET Feature 30V/1A, RDS(ON) =750m (MAX) @VGS = 10V. Ids = 0.60A RDS(ON) = 900m (MAX) @VGS = 4.5V. Ids= 0.20A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteristics TA=25 Unless Otherwise

IRLML6402 P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m (MAX) @VGS = -4.5V. GS RDS(ON) = 140m (MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem

IRLML5203

IRLML2803 SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 V ID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC

IRLML6401 P-Channel Enhancement MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

IRLML2502 N-Channel Enhancement-Mode MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

IRLML2244TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

IRLML6302TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

IRLML6344GT www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

IRLML6401GTRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

IRLML6401TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

IRLML2803TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-

IRLML2502TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

IRLML0030TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

IRLML2402TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

IRLML2502G www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Con

IRLML0100TRPBF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backl

IRLML6402TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

IRLML6344TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

IRLML5203TRPBF www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (

IRLML2030TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

IRLML0040TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-

IRLML6402G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

IRLML0060TRPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23

IRLML2060TR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23)

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRLML6402 DESCRIPTION Ultra low on-resistance P-Channel MOSFET SOT-23 Footprint Available in tape and reel Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIM

Isc P-Channel MOSFET Transistor IRLML6302 FEATURES With SOT-23 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -2

isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF FEATURES Low drain-source on-resistance RDS(on) 45m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provides the designer with an extremely efficient and reliable device for use in battery and load management. ABSOLUTE MAXIM