PD - 96310CIRLML9301TRPbFHEXFET Power MOSFETVDS-30 VVGS Max 20 V G 1RDS(on) max 64 m 3 D(@VGS = -10V)RDS(on) max S 2103 m Micro3TM (SOT-23)(@VGS = -4.5V)IRLML9301TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 64m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompatibl

Product specificationIRLML9301TRPbFHEXFET Power MOSFETVDS-30 VVGS Max 20 V G 1RDS(on) max 64 m 3 D(@VGS = -10V)RDS(on) max S 2103 m Micro3TM (SOT-23)(@VGS = -4.5V)IRLML9301TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 64m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibility

IRLML9301TRwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

PD - 97519BIRLML9303TRPbFHEXFET Power MOSFETVDS-30 VVGS Max 20 VRDS(on) max 165 m (@VGS = -10V)RDS(on) max 270 m Micro3TM (SOT-23)(@VGS = -4.5V)IRLML9303TRPbFApplication(s)System/Load SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Eas

Product specificationIRLML9303TRPbFHEXFET Power MOSFETVDS-30 VVGS Max 20 VRDS(on) max 165 m (@VGS = -10V)RDS(on) max 270 m Micro3TM (SOT-23)(@VGS = -4.5V)IRLML9303TRPbFApplication(s)System/Load SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques resu

IRLML2402PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

PD - 97631IRLML2244TRPbFHEXFET Power MOSFETVDS-20 VVGS Max 12 VG 1RDS(on) max 54 m 3 D(@VGS = -4.5V)RDS(on) max 2S95 m Micro3TM (SOT-23)(@VGS = -2.5V)IRLML2244TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 54m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompatib

PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

PD - 9.1260DIRLML5103HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (

IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (

PD - 96160IRLML6401GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (

PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati

PD - 96164AIRLML2803GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFET G 1VDSS = 30Vl SOT-23 Footprint3 Dl Low Profile (

PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend

PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

PD- 93756CIRLML6401HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 FootprintG 1 Low Profile (

PD - 93757BIRLML2502HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFETG 1 SOT-23 FootprintVDSS = 20V Low Profile (

PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

IRLML2402PbF-1HEXFET Power MOSFETVDS 20 VG 1RDS(on) max 0.25 (@V = 4.5V)GS3 DQg (typical) 2.6 nCID S 21.2 A(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

PD - 96163AIRLML2502GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

PD - 9.1257CIRLML2402HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (

PD - 96159IRLML6302GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

PD - 97529AIRLML6246TRPbFHEXFET Power MOSFETVDS20 VG 1VGS Max 12 VRDS(on) max 3 D46 m(@VGS = 4.5V)RDS(on) max S 2Micro3TM (SOT-23)66 mIRLML6246TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package Multi-vendor compatibilityRoHS compliant containing no lead, no bromide and no h

PD - 97584AIRLML6346TRPbFHEXFET Power MOSFETVDS30 VVGS Max 12 VRDS(on) max 63 m(@VGS = 4.5V)RDS(on) max Micro3TM (SOT-23)80 mIRLML6346TRPbF(@VGS = 2.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package results in Multi-vendor compatibilityRoHS compliant containing no lead, no bromide an

IRLML0100PbF-1HEXFET Power MOSFETVDS 100 VRDS(on) max G 1220 m(@V = 10V)GSQg (typical) 2.5 nC3 DID 1.6 A(@T = 25C)AS 2Micro3TM (SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

PD- 93755IRLML6402HEXFET Power MOSFET Ultra Low On-ResistanceD P-Channel MOSFET SOT-23 FootprintVDSS = -20V Low Profile (

PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

IRLML0030PbF-1HEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierM

IRLML6401PbF-1HEXFET Power MOSFETVDS -12 VRDS(on) max G 10.05 (@V = -4.5V)GSQg (typical) 10 nC 3 DID -4.3 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu

IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

PD - 94947BIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

IRLML6402PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max G 10.065 (@V = -4.5V)GSQg (typical) 8.0 nC3 DID -3.7 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

PD - 9.1259DIRLML6302HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (

PD - 97157IRLML0100TRPbFHEXFET Power MOSFETVDS100 VG 1VGS Max 16 VRDS(on) max 3 D220 m(@VGS = 10V)S 2RDS(on) max Micro3TM (SOT-23)235 mIRLML0100TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

PD - 93967PROVISIONALIRLML5203HEXFET Power MOSFET)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel MOSFETs from International RectifierG 1utilize advanced processing techniques to achieve theextre

IRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 30Vl Low Profile (

IRLML6401PbFl Ultra Low On-Resistance HEXFET Power MOSFETl P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

PD - 97535AIRLML6244TRPbFHEXFET Power MOSFETVDS20 VVGS Max12 VRDS(on) max 21.0 m(@VGS = 4.5V)RDS(on) max 27.0 m Micro3TM (SOT-23)(@VGS = 2.5V)IRLML6244TRPbFApplication(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsLow RDS(on) (

PD - 96165AIRLML5103GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceG 1l P-Channel MOSFETVDSS = -30Vl SOT-23 Footprint3 Dl Low Profile (

PD - 97529AIRLML6246TRPbFHEXFET Power MOSFETVDS20 VG 1VGS Max 12 VRDS(on) max 3 D46 m(@VGS = 4.5V)RDS(on) max S 2Micro3TM (SOT-23)66 mIRLML6246TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package Multi-vendor compatibilityRoHS compliant containing no lead, no bromide and no h

PD - 96166IRLML5203GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescription These P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the extremel

PD - 97157IRLML0100TRPbFHEXFET Power MOSFETVDS100 VG 1VGS Max 16 VRDS(on) max 3 D220 m(@VGS = 10V)S 2RDS(on) max Micro3TM (SOT-23)235 mIRLML0100TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati

PD - 97584AIRLML6346TRPbFHEXFET Power MOSFETVDS30 VVGS Max 12 VRDS(on) max 63 m(@VGS = 4.5V)RDS(on) max Micro3TM (SOT-23)80 mIRLML6346TRPbF(@VGS = 2.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package results in Multi-vendor compatibilityRoHS compliant containing no lead, no bromide an

PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

IRLML2502PbF-1HEXFET Power MOSFETVDS 20 VRDS(on) max G 10.045 (@V = 4.5V)GSQg (typical) 8.0 nC 3 DID 4.2 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

PD - 9.1258CIRLML2803HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFETVDSS = 30V SOT-23 Footprint Low Profile (

IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

PD - 96162AIRLML2402GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 20Vl SOT-23 Footprint3 Dl Low Profile (

PD - 97535AIRLML6244TRPbFHEXFET Power MOSFETVDS20 VVGS Max12 VRDS(on) max 21.0 m(@VGS = 4.5V)RDS(on) max 27.0 m Micro3TM (SOT-23)(@VGS = 2.5V)IRLML6244TRPbFApplication(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsLow RDS(on) (

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env

IRLML2246PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max G 1135 m(@V = -4.5V)GS3 DQg (typical) 2.9 nCID -2.6 AS 2(@T = 25C)AMicro3TM (SOT-23)IRLML2246TRPbF-1Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmenta

IRLML6302PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max 0.60 G 1(@V = -4.5V)GSQg (typical) 2.4 nC3 DID -0.78 A(@T = 25C)AS 2Micro3TMFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, In

PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

PD - 97630AIRLML2246TRPbFHEXFET Power MOSFETVDS-20 VVGS Max12 VRDS(on) max 135 m(@VGS = -4.5V)RDS(on) max Micro3TM (SOT-23)236 mIRLML2246TRPbF(@VGS = -2.5V)Application(s) System/Load SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l Dl l l l Gl Sl Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

Product specificationIRLML2244TRPbFHEXFET Power MOSFETVDS-20 VVGS Max 12 VG 1RDS(on) max 54 m 3 D(@VGS = -4.5V)RDS(on) max 2S95 m Micro3TM (SOT-23)(@VGS = -2.5V)IRLML2244TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 54m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit

Product specificationIRLML6401PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (

Product specificationIRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

Product specificationIRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

Product specificationIRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

Product specificationIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

Product specificationIRLML6244TRPbFHEXFET Power MOSFETVDS20 VVGS Max12 VRDS(on) max 21.0 m(@VGS = 4.5V)RDS(on) max 27.0 m Micro3TM (SOT-23)(@VGS = 2.5V)IRLML6244TRPbFApplication(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsLow RDS(on) (

Product specificationIRLML6246TRPbFHEXFET Power MOSFETVDS20 VG 1VGS Max 12 VRDS(on) max 3 D46 m(@VGS = 4.5V)RDS(on) max S 2Micro3TM (SOT-23)66 mIRLML6246TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package Multi-vendor compatibilityRoHS compliant containing no lead, no bromid

Product specificationIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit

Product specificationIRLML6346TRPbFHEXFET Power MOSFETVDS30 VVGS Max 12 VRDS(on) max 63 m(@VGS = 4.5V)RDS(on) max Micro3TM (SOT-23)80 mIRLML6346TRPbF(@VGS = 2.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard SOT-23 Package results in Multi-vendor compatibilityRoHS compliant containing no lead, no

Product specificationIRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques

Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the

Product specificationIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout

Product specificationIRLML2246TRPbFHEXFET Power MOSFETVDS-20 VVGS Max12 VRDS(on) max 135 m(@VGS = -4.5V)RDS(on) max Micro3TM (SOT-23)236 mIRLML2246TRPbF(@VGS = -2.5V)Application(s) System/Load SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques result

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 4.2 A1 2 RDS(ON) 45m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 RDS(ON) 80m (VGS = 2.5V)1.9 -0.1 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint.1 2+0.1+0.050.95 -0.1 Low profile(1.1mm). 0.1 -0.01+0.11.9 -0.1 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source3

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features Ultra low on-resistance. P-Channel MOSFET.1 2 SOT-23 Footprint.+0.02+0.10.15 -0.020.95-0.1 Low profile(1.1mm). +0.11.9 -0.2 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 250m (VGS = 4.5V)0.15 -0.020.95 -0.1+0.1D1.9-0.2 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1 2+0.02+0.10.15 -0.020.95-0.1+0.11.9 -0.21.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.1+0.05 RDS(ON) 220m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. Source3. DrainS 2 Absolute Maximum Ratings Ta = 25Parameter S

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 4.2 A RDS(ON) 45m (VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 80m (VGS = 2.5V) 0.15 -0.020.95 -0.1+0.11.9 -0.2 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Param

IRLML6401P-Channel Enhancement Mode Field Effect Transistor D IDV(BR)DSS RDS(on)MAX G m@-10V60S Equivalent Circuit -30V 70 m -4.2A @-4.5Vm@-2.5V85FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN DAPPLICATION Load Switch for Portable Devic

IRLML6402LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

RUMWp UMW IRLML6401UMW IRLML6401UMW IRLML6401TyP-Channel Enhancement MOSFET FeaturesSOT23 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1. BASE 2. EMITTER MARKING3. COLLECTOR1F MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8 Continuous Drain Cu

RUMWUMW IRLML2502UMW IRLML2502UMW IRLML2502SOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW IRLML2502ID SOT-23 V(BR)DSS RDS(on)MAX 45m@4.5V20V4.2A1. GATE 80 m@2.5V2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MKMaximum ratin

RUMW UMW IRLML6402UMW IRLML6402UMW IRLML6402P-Channel Enhancement MOSFETSOT23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(1.1mm). Available in tape and reel.1. BASE Fast switching.2. EMITTER 3. COLLECTORMARKING 1E MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

RUMWUMW IRLML5203UMW IRLML5203UMW IRLML5203SOT-23 Plastic-Encapsulate MOSFETS SOT23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX \85m@-10 V1. BASE -3.0A-30V145m@-4.5V2. EMITTER 3. COLLECTORGeneral Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved

IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili

IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a

IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

IRLML6401P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -16V/-3A, R = 110m(MAX) @V = -4.5V.DS(ON) GS R = 140m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSOT-23 SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless

IRLML2402N-Channel Enhancement Mode MOSFET Feature 30V/1A, RDS(ON) =750m(MAX) @VGS = 10V. Ids = 0.60A RDS(ON) = 900m(MAX) @VGS = 4.5V. Ids= 0.20A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteristics TA=25 Unless Otherwise

IRLML6402P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m(MAX) @VGS = -4.5V. GS RDS(ON) = 140m(MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem

IRLML5203

IRLML2803SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC

IRLML6401 P-Channel Enhancement MOSFETRoHS Device Halogen Free SOT-23 FeatureslUltra Low On-ResistancelP-Channel MOSFETl SOT-23 Footprintl Low Profile (

IRLML2502N-Channel Enhancement-Mode MOSFETRoHS Device Halogen Free SOT-23 Featuresl Ultra Low On-ResistancelN-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

IRLML2244TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

IRLML6302TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

IRLML6344GTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

IRLML6401GTRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

IRLML6401TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

IRLML2803TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-

IRLML2502TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

IRLML0030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

IRLML2402TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

IRLML2502Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con

IRLML0100TRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backl

IRLML6402TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

IRLML6344TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

IRLML5203TRPBFwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(

IRLML2030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

IRLML0040TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-

IRLML6402Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

IRLML0060TRPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23

IRLML2060TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRLML6402DESCRIPTIONUltra low on-resistanceP-Channel MOSFETSOT-23 FootprintAvailable in tape and reelMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIM

Isc P-Channel MOSFET Transistor IRLML6302FEATURESWith SOT-23 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -2

isc N-Channel MOSFET Transistor IRFIRLML2502TRPBFFEATURESLow drain-source on-resistance:RDS(on) 45mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvides the designer with an extremely efficient and reliabledevice for use in battery and load management.ABSOLUTE MAXIM