IRLR2905TR - описание и поиск аналогов

IRLR2905TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Autom

PD- 91334E IRLR/U2905 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027 G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot

PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem

PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

IRLR2905ZTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limi

isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 FEATURES Static drain-source on-resistance RDS(on) 27m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G