Справочник MOSFET. IRLR3105TR

 

IRLR3105TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR3105TR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRLR3105TR

 

 

IRLR3105TR Datasheet (PDF)

 ..1. Size:796K  cn vbsemi
 irlr3105tr.pdf

IRLR3105TR IRLR3105TR

IRLR3105TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 6.1. Size:322K  international rectifier
 irlr3105pbf irlu3105pbf.pdf

IRLR3105TR IRLR3105TR

PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie

 6.2. Size:185K  international rectifier
 irlr3105.pdf

IRLR3105TR IRLR3105TR

PD - 94510BIRLR3105AUTOMOTIVE MOSFETIRLU3105HEXFET Power MOSFETFeaturesDl Logic-Level Gate DriveVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 0.037l 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 25ASDescriptionSpecifically designed for Automotive applications, this HEXFET Power

 6.3. Size:619K  international rectifier
 auirlr3105.pdf

IRLR3105TR IRLR3105TR

PD - 97703AAUTOMOTIVE GRADEAUIRLR3105FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55V Dynamic dV/dT Ratingl Low On-ResistanceRDS(on) typ.30ml 175C Operating TemperatureG max 37ml Fast Switchingl Fully Avalanche RatedSID25Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS CompliantDl A

 6.4. Size:322K  infineon
 irlr3105pbf irlu3105pbf.pdf

IRLR3105TR IRLR3105TR

PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie

 6.5. Size:241K  inchange semiconductor
 irlr3105.pdf

IRLR3105TR IRLR3105TR

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105FEATURESStatic drain-source on-resistance:RDS(on)37mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

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