IRLR3105TR - описание и поиск аналогов

IRLR3105TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

PD - 94510B IRLR3105 AUTOMOTIVE MOSFET IRLU3105 HEXFET Power MOSFET Features D l Logic-Level Gate Drive VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 0.037 l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 25A S Description Specifically designed for Automotive applications, this HEXFET Power

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-