IRLR3636TRPBF - описание и поиск аналогов

IRLR3636TRPBF www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V