R UMW UMW SI2328ASOT-23-3L Plastic-Encapsulate MOSFETS FeaturesSOT23 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V)MARKINGEquivalent Circuit 1. GATE 2. SOURCE D3. DRAIN GS Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Ta=

Si2328DSVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.250 at VGS = 10 V 100 1.5 100 % Rg Tested TrenchFET Power MOSFET TO-236(SOT-23)G 13 DS 2Top ViewSi2328DS (D8)**Marking CodeOrdering Information:Si2328DS-T1-E3 (Lead (Pb)-free)Si2328DS-

Shenzhen Tuofeng Semiconductor Technology Co., LtdSi2328N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)100 0.300 @ VGS = 10 V 1.5(SOT-23)G 13 DS 2Top ViewSi2328DS (D8)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 100VGate-Source Voltage VGS "20Con

SMD Type MOSFETN-Channel Enhancement MOSFET SI2328DS (KI2328DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Un

SI2328MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit100Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +20Drain Current (continuous)I 1.5 ADDrain Current (pulsed) I ADM6Total Device Dissipa

SI2328DSwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlightin