Справочник MOSFET. NTD2955VT4G

 

NTD2955VT4G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD2955VT4G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.061(typ) Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

NTD2955VT4G Datasheet (PDF)

 ..1. Size:829K  cn vbsemi
ntd2955vt4g.pdfpdf_icon

NTD2955VT4G

NTD2955VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

 7.1. Size:68K  onsemi
ntd2955.pdfpdf_icon

NTD2955VT4G

NTD2955Power MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
ntd2955-p.pdfpdf_icon

NTD2955VT4G

NTD2955, NTD2955PPower MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating

 7.3. Size:98K  onsemi
ntd2955 nvd2955.pdfpdf_icon

NTD2955VT4G

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

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History: AP0803GMP-HF | BSC032N03SG | IRHLG7670Z4 | BF964S | IRFP443R | 2SK4121LS | IRL3715ZCS

 

 
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