Справочник MOSFET. FDB039N06

 

FDB039N06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDB039N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 174 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 102 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO263 D2PAK
     - подбор MOSFET транзистора по параметрам

 

FDB039N06 Datasheet (PDF)

 ..1. Size:538K  fairchild semi
fdb039n06.pdfpdf_icon

FDB039N06

July 2009FDB039N06 N-Channel PowerTrench MOSFET60V, 174A, 3.9mFeatures General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yetmaintain superior switching perfor

 9.1. Size:722K  fairchild semi
fdb031n08.pdfpdf_icon

FDB039N06

July 2008FDB031N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superi

 9.2. Size:562K  fairchild semi
fdb035n10a.pdfpdf_icon

FDB039N06

November 2013FDB035N10A N-Channel PowerTrench MOSFET100 V, 214 A, 3.5 mFeatures Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.

 9.3. Size:236K  fairchild semi
fdb035an06a0.pdfpdf_icon

FDB039N06

July 2002FDB035AN06A0 N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

Другие MOSFET... FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , IRF640N , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , FDB070AN06A0 , FDB075N15A .

History: IRF3805

 

 
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