FDB039N06 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDB039N06
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 231 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 174 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: TO263 D2PAK
Аналог (замена) для FDB039N06
FDB039N06 Datasheet (PDF)
fdb039n06.pdf

July 2009FDB039N06 N-Channel PowerTrench MOSFET60V, 174A, 3.9mFeatures General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yetmaintain superior switching perfor
fdb031n08.pdf

July 2008FDB031N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superi
fdb035n10a.pdf

November 2013FDB035N10A N-Channel PowerTrench MOSFET100 V, 214 A, 3.5 mFeatures Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.
fdb035an06a0.pdf

July 2002FDB035AN06A0 N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co
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