SI4953ADY-T1-E3 - параметры транзистора MOSFET, его аналоги, datasheet

SI4953ADY-T1-E3 Datasheet (PDF)

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SI4953ADY-T1-E3www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

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Si4953ADYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 300.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25To

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SMD Type MOSFETDual P-Channel MOSFETSI4953ADY (KI4953ADY)SOP-8 Unit:mm Features VDS (V) =-30V ID =-4.9 A (VGS =-10V)1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 90m (VGS =-4.5V)1 S1 5 D2 6 D22 G17 D13 S28 D14 G2S1 S2G1 G2D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State Unit Drain-Sourc

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