SI4953DY-T1-E3 - аналоги, параметры транзистора

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SI4953DY-T1-E3 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T

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Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET FEATURES PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = -10 V -4.9 -30 30 0.095 @ VGS = -4.5 V -3.6 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 Ordering Information Si4953DY Si4953DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFET ABSOLUTE M

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SMD Type MOSFET Dual P-Channel MOSFET SI4953DY (KI4953DY) SOP-8 Features VDS (V) =-30V ID =-4.9 A (VGS =-10V) 1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 95m (VGS =-4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 7 Drain1 3 Source2 S1 S2 8 Drain1 4 Gate2 G1 G2 D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

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Si4953ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 30 0.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 To